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hexfet power mosfet notes through are on page 8 applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters features benefits pqfn 5x6 mm low r dson ( 9.0m ? ) lower conduction losses low thermal resistance to pcb ( 0.8c/w) enable better thermal dissipation 100% rg tested increased reliability low profile ( 0.9 mm ) results in increased power densit y industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability v ds 100 v r ds(on) max (@v gs = 4.5v) 9.9 m ? q g (typical) 44 nc r g (typical) 1.2 ? i d (@t mb = 25c) 88 a absolute maximum ratings parameter units v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t mb = 25c continuous drain current, v gs @ 10v i d @ t mb = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t mb = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 13 56 400 16 11 88 -55 to + 150 3.6 0.029 156

form quantit y IRLH5030PBF pqfn 5mm x 6mm tape and reel 4000 irlh5030trpbf base part number package type standard pac k orderable part number
IRLH5030PBF
s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c r ds(on) static drain-to-source on-resistance ??? 7.2 9.0 ??? 7.9 9.9 v gs(th) gate threshold voltage 1.0 ??? 2.5 v ? v gs(th) gate threshold voltage coefficient ??? -5.9 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 160 ??? ??? s q g total gate charge ??? 94 ??? nc q g total gate charge ??? 44 66 q gs1 pre-vth gate-to-source charge ??? 7.7 ??? q gs2 post-vth gate-to-source charge ??? 4.0 ??? q gd gate-to-drain charge ??? 22 ??? q godr gate charge overdrive ??? 10.3 ??? see fig.17 & 18 q sw switch char g e (q gs2 + q gd ) ??? 26 ??? q oss output charge ??? 20 ??? nc r g gate resistance ??? 1.2 ??? ? t d(on) turn-on delay time ??? 21 ??? t r rise time ??? 72 ??? t d(off) turn-off delay time ??? 41 ??? t f fall time ??? 41 ??? c iss input capacitance ??? 5185 ??? c oss output capacitance ??? 300 ??? c rss reverse transfer capacitance ??? 150 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 32 48 ns q rr reverse recovery charge ??? 190 285 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 150a a 100 ??? ??? 400 ??? ??? na ns pf nc conditions see fig.15 max. 230 50 ? = 1.0mhz v ds = 50v ??? conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 50a mosfet symbol v ds = 16v, v gs = 0v v dd = 50v, v gs = 4.5v i d = 50a v gs = 0v v ds = 50v v gs = 16v v gs = -16v v ds = 100v, v gs = 0v v gs = 10v, v ds = 50v, i d = 50a t j = 25c, i f = 50a, v dd = 50v di/dt = 500a/s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 50a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 50v, i d = 50a v ds = 100v, v gs = 0v, t j = 125c m ? a i d = 50a thermal resistance parameter typ. max. units r jc-mb junction-to-mounting base 0.5 0.8 r jc (top) junction-to-case ??? 15 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 33
IRLH5030PBF
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1 2 3 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 1000 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 40 80 120 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 50a
IRLH5030PBF
fig 11. maximum effective transient thermal impedance, junction-to-mounting base fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 500a i d = 1.0ma i d = 1.0a 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
IRLH5030PBF
fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.5a 12a bottom 50a 0 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c fig 14. typical avalanche current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
IRLH5030PBF
fig 15. ! !" #$%& for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
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? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period '
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IRLH5030PBF
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IRLH5030PBF
0 qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.18mh, r g = 25 ? , i as = 50a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) pqfn 5x6 outline "b" tape and reel

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